Comment on “Electronic structure of the high-temperature Ge(0 0 1) surface studied by valence band photo-emission” [Surface Science 537 (2003) L423–L428]

Using molecular-dynamics simulation, we study sputtering and defect formation induced by 5 keV Xe+ ion impact on a Pt(1 1 1) surface at oblique and glancing incidence angles. Impact on a terrace produces yield maxima at ϑ=60–65° incidence angle towards the surface normal. Beyond 75–80°, no damage is produced due to projectile ion reflection. Impact on a dense-packed step, however, produces defects in sizeable numbers up to glancing incidence, ϑ=85°. The dependence of the yields on the incidence angle and distance of the impact point of the projectile to the step are discussed.