Title of article
LEED structural analysis of GaAs(0 0 1)-c(4 × 4) surface
Author/Authors
Romanyuk، نويسنده , , O. and Jiricek، نويسنده , , P. and Cukr، نويسنده , , M. and Barto?، نويسنده , , I.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
5
From page
89
To page
93
Abstract
The tensor LEED analysis of the intensities of electron beams diffracted from the GaAs(0 0 1)-c(4 × 4) grown by molecular beam epitaxy (MBE) has been performed. Surface structures with symmetrical and asymmetrical 3-dimer models in the topmost layer have been investigated. The best-fit structure with central dimer compressed with respect to the As4 molecule by 20% has been found. Model with asymmetrically arranged dimers fits experimental data better than that with symmetrical alignment.
Keywords
scattering , Diffraction , Surface relaxation and reconstruction , Low energy electron diffraction (LEED) , Gallium arsenide , Low index single crystal surfaces , Molecular Beam Epitaxy , Electron–solid interactions
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1696865
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