Ion-beam method characterization of erbium incorporation into glass surface for photonics applications

We present the ion beam analytical technique (RBS, PIXE) characterization of erbium incorporation into the glass surface. In this paper we report on the characterization of our samples fabricated by medium temperature doping of erbium into the glass using electric-field assisted diffusion from Er3+ containing reaction melt. RBS (Rutherford backscattering spectroscopy) is very powerful tool for Er depth profile determination in the glass substrate especially in the case of used glass as GIL 13K, which is free of the heavy trace elements. The PIXE (particle induced X-ray emission spectroscopy) is able to evaluate the Er integral amount in the glass substrate. The incorporated Er amount is influenced by experimental conditions as diffusion time, used current and wt.% of Er in the used melt or post-diffusion annealing treatment.