Title of article :
Single atom diffusion of Pb on a Si(1 1 1)-7 × 7 surface
Author/Authors :
Kuntov?، نويسنده , , Z. and Jel??nek، نويسنده , , P. and Ch?b، نويسنده , , V. and Chvoj، نويسنده , , Z.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2004
Abstract :
Pb diffusion on the Si(1 1 1)-7 × 7 surface was studied with 16 different energy barriers. As a part of general problem of diffusion in the unit cell, some characteristics of diffusion (as frequency factor, effective energy barrier or differences in binding energy) was found analytically as a steady state solution of the master equation. The probability distribution of the occupation of particular sites was compared with the result of the Monte Carlo simulation and the STM experiment. Starting from the values obtained with the semi-empirical extended Hückel approximation, the diffusion barriers were adjusted to obtain a reasonable coherence with the experiment. The results of MC simulation and the analytical solution agree quite well and reproduce the dynamics of a Pb atom in the 7 × 7 unit cell.
Keywords :
surface diffusion , Lead , Semiconducting surfaces , Monte Carlo simulations , Scanning tunneling microscopy
Journal title :
Surface Science
Journal title :
Surface Science