Title of article
Calculated electronic and transport properties of Fe/GaAs/Fe(0 0 1) tunnel junctions
Author/Authors
Vlaic، نويسنده , , P. and Baadji، نويسنده , , N. and Alouani، نويسنده , , M. and Dreyssé، نويسنده , , H. and Eriksson، نويسنده , , O. and Bengone، نويسنده , , O. and Turek، نويسنده , , I.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
6
From page
303
To page
308
Abstract
The electronic structure and magnetic properties of Fe/GaAs/Fe (0 0 1) tunnel junction have been studied using a first-principles Greenʹs function technique, based on the tight-binding linear muffin-tin orbital method in its atomic spheres approximation, in conjunction with the coherent potential approximation to describe the disorder effects such as the interdiffusion at the interface. The results show that at the Fe/GaAs interface there is a charge transfer from iron to the semiconductor region and an enhancement of Fe magnetic moment. The magnetic properties are found to be sensitive to the interface terminations and influenced by the interdiffusion. The spin dependent transport properties are also discussed.
Keywords
Greenיs function methods , Tunneling , Magnetic phenomena (cyclotron resonance , Phase transitions , Metal–semiconductor interfaces , Electrical transport (conductivity , resistivity , etc.) , etc.) , Mobility
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1697184
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