Title of article
Photoluminescence measurements in Be-δ-doped back-gated quantum well
Author/Authors
Yamaguchi، نويسنده , , Abraham M. Y. Nomura، نويسنده , , S. and Sato، نويسنده , , D. and Akazaki، نويسنده , , T. and Tamura، نويسنده , , H. and Takayanagi، نويسنده , , H.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
6
From page
94
To page
99
Abstract
We measured the photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-δ-doped GaAs/AlGaAs quantum well (QW) with a back gate. The electron density is controlled by means of the back-gate voltage. We estimated the electron density using the magneto-optical method and the PL linewidth, and also by undertaking transport measurements. We show that a uniform 2DES as large as 1 mm2 is induced by the back-gate operation from 2.5 × 1010 cm−2. This experiment indicates that optical measurement with a back-gated QW is advantageous for studying the low-density 2DES.
Keywords
Photoluminescence , Quantum well , 2DES
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1697245
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