Title of article :
Polarization modification of PZT thin films by means of electric fields and stress in scanning force microscopy
Author/Authors :
Franke، نويسنده , , K. and Weihnacht، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Pages :
11
From page :
144
To page :
154
Abstract :
Polarization switching in scanning force microscopy (SFM) is influenced by both electric fields and stress, whereby the latter can arise inherently from Maxwell stress. We discuss the influence of electric charges and of the polarization asymmetry on the switching behaviour. For single crystallites of PZT(53/47) thin films, the sectors for ferroelectric, ferroelastoelectric and ferroelastic switching are represented in a field-stress map. The influence of stress on the second harmonic of the SFM is also discussed.
Keywords :
Microscopy atomic force , Polarization dielectric , Thin films dielectric , ferroelectricity
Journal title :
Surface Science
Serial Year :
2005
Journal title :
Surface Science
Record number :
1697311
Link To Document :
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