Title of article
Impact of interface relaxation on the nanoscale corrugation in Pb/Si(1 1 1) islands
Author/Authors
Chan، نويسنده , , T.L. and Wang، نويسنده , , C.Z. and Hupalo، نويسنده , , M. C. Tringides، نويسنده , , M.C. and Lu، نويسنده , , W.C. and Ho، نويسنده , , K.M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
5
From page
179
To page
183
Abstract
The nanoscale hexagonal pattern observed in scanning tunneling microscopy (STM) for 3-layer and 4-layer Pb islands on Si(1 1 1) is studied theoretically. We found that besides thickness the atomic rearrangement at the Pb/Si interface plays an important role in determining the STM patterns. Electronic structures of the Pb film on Si(1 1 1) obtained from fully relaxed and unrelaxed Pb films are qualitatively different. Simulated STM images for Pb films with different stacking also show that the corrugation patterns are sensitive to the buried Pb–Si interfacial structure.
Keywords
Low index single crystal surfaces , Metal-semiconductor interfaces , Scanning tunneling microscopy , Molecular dynamics , Surface relaxation and reconstruction , SELF-ASSEMBLY , Silicon , Lead
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1697493
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