Title of article
Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment
Author/Authors
Arima، نويسنده , , Kenta and Kubota، نويسنده , , Akihisa and Mimura، نويسنده , , Hidekazu and Inagaki، نويسنده , , Kouji and Endo، نويسنده , , Katsuyoshi and Mori، نويسنده , , Yuzo and Yamauchi، نويسنده , , Kazuto، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
4
From page
185
To page
188
Abstract
A surface preparation method with fine SiO2 particles in water is developed to flatten Si(0 0 1) surfaces on the nanometer scale. The flattening performance of Si(0 0 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100 × 100 nm2) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the 〈1 1 0〉 direction on terraces.
Keywords
water , Low index single crystal surfaces , Solid–liquid interfaces , Scanning tunneling microscopy , surface structure , morphology , roughness and topography , Silicon
Journal title
Surface Science
Serial Year
2006
Journal title
Surface Science
Record number
1697497
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