Title of article :
Atomic structure of thin dysprosium-silicide layers on Si(1 1 1)
Author/Authors :
Engelhardt، نويسنده , , I. and Preinesberger، نويسنده , , C. and Becker، نويسنده , , S.K. and Eisele، نويسنده , , H. and Dنhne، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Pages :
7
From page :
755
To page :
761
Abstract :
We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(1 1 1). In the submonolayer regime, both a 2 3 × 2 3 R 30 ° and a 5 × 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the 2 3 × 2 3 R 30 ° superstructure. For one monolayer, a 1 × 1 superstructure based on hexagonal DySi2 was observed, while several monolayers thick films are characterized by a 3 × 3 R 30 ° superstructure from Dy3Si5.
Keywords :
Lanthanides , Silicides , Silicon , Thin film structures , Scanning-tunneling microscopy
Journal title :
Surface Science
Serial Year :
2006
Journal title :
Surface Science
Record number :
1697761
Link To Document :
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