Author/Authors :
Rota، نويسنده , , A. and Martinez-Gil، نويسنده , , A. and Agnus، نويسنده , , G. and Moyen، نويسنده , , E. and Maroutian، نويسنده , , T. and Bartenlian، نويسنده , , B. and Mégy، نويسنده , , R. and Hanbücken، نويسنده , , M. and Beauvillain، نويسنده , , P.، نويسنده ,
Abstract :
Au island nucleation and growth on a Si(1 1 1) 7 × 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255–430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au–Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges.
Keywords :
Growth , surface structure , morphology , roughness and topography , Scanning tunneling microscopy , Gold , Nucleation , Vicinal single crystal surfaces , Silicon
