Title of article :
Hydrogen related point defects in silicon based layers: Si(·)H and SiOOH
Author/Authors :
D??nek، نويسنده , , Vladislav and Vacek، نويسنده , , Karel and Yuzhakov، نويسنده , , Gleb and Bastl، نويسنده , , Zden?k and Naumov، نويسنده , , Sergej، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Abstract :
Layers prepared by pulsed TEA CO2 pulsed laser ablation (PLA) of SiO and SiO2 targets in helium were exposed to hydrogen and deuterium atmosphere up to several kPa. The deposited layers were investigated by FTIR, EPR and XP spectroscopy. Among various Si species silyl radical Si(·)H (Si(·)D) at 2166 (1568) cm−1—H(I) center—and silyl hydroperoxide SiOOH (SiOOD) at 3587 (2648) cm−1 were identified in FTIR spectra. Chemical pathways for production of these species are discussed. Experimental results are supported by quantum chemical calculations.
Keywords :
Surface defects , Silicon oxides , pulsed laser ablation , infrared spectroscopy
Journal title :
Surface Science
Journal title :
Surface Science
