Title of article :
The study on Schottky contact between Au and clean CdZnTe
Author/Authors :
Zha، نويسنده , , Gangqiang and Jie، نويسنده , , Wanqi and Zeng، نويسنده , , Dongmei and Xu، نويسنده , , Yadong and Zhang، نويسنده , , Wenhua and Xu، نويسنده , , Faqiang، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Pages :
4
From page :
2629
To page :
2632
Abstract :
Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f7/2, Cd 4d, Te 4d5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained.
Keywords :
CdZnTe , LEED , XPS , SRPES , Metal-induced gap states , Schottky contact
Journal title :
Surface Science
Serial Year :
2006
Journal title :
Surface Science
Record number :
1698631
Link To Document :
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