Author/Authors :
Abhaya، نويسنده , , S. and Venugopal Rao، نويسنده , , G. and Kalavathi، نويسنده , , S. and Sastry، نويسنده , , V.S. and Amarendra، نويسنده , , G.، نويسنده ,
Abstract :
The transformation of Co/Si to CoSi2/Si in the temperature range of 300–1170 K has been investigated using depth-resolved positron annihilation and Glancing incidence X-ray diffraction (GIXRD). The different silicide phases formed are identified from the experimental positron annihilation characteristics, which are consistent with the GIXRD results. The present study clearly indicates the absence of vacancy defects in the silicide overlayer.
