Title of article :
Chemically prepared well-ordered InP(0 0 1) surfaces
Author/Authors :
Tereshchenko، نويسنده , , O.E. and Paget، نويسنده , , D. and Chiaradia، نويسنده , , Giovanni P. A. Placidi، نويسنده , , E. and Bonnet، نويسنده , , J.E. and Wiame، نويسنده , , F. and Taleb-Ibrahimi، نويسنده , , A.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Pages :
7
From page :
3160
To page :
3166
Abstract :
In the present work HCl-isopropanol treated and vacuum annealed InP(0 0 1) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 °C induces desorption of InClx overlayer and reveals a P-rich (2 × 1) surface. Subsequent annealing at higher temperature induces In-rich (2 × 4) surface. The structural properties of chemically prepared InP(0 0 1) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers.
Keywords :
InP , HCl-isopropanol treatment , passivation , Low energy electron diffraction , Soft X-ray photoemission , Reflectance anisotropy spectroscopy
Journal title :
Surface Science
Serial Year :
2006
Journal title :
Surface Science
Record number :
1698785
Link To Document :
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