Author/Authors :
Seyller، نويسنده , , Th. and Emtsev، نويسنده , , K.V. and Gao، نويسنده , , K. and Speck، نويسنده , , F. and Ley، نويسنده , , L. and Tadich، نويسنده , , A. and Broekman، نويسنده , , L. and Riley، نويسنده , , J.D. and Leckey، نويسنده , , R.C.G. and Rader، نويسنده , , O. and Varykhalov، نويسنده , , A. M. Shikin، نويسنده , , A.M.، نويسنده ,
Abstract :
Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ϕB,n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate.
Keywords :
silicon carbide , Graphite , Photoelectron spectroscopy , band structure , Vicinal surface
