• Title of article

    Growth and characterization of thin PTCDA films on 3C-SiC(0 0 1)c(2 × 2)

  • Author/Authors

    Gustafsson، نويسنده , , J.B. and Moons، نويسنده , , E. and Widstrand، نويسنده , , S.M and Johansson، نويسنده , , L.S.O.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2006
  • Pages
    7
  • From page
    4758
  • To page
    4764
  • Abstract
    The growth of thin 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) films on a 3C-SiC(0 0 1)c(2 × 2) substrate has been studied by means of photoelectron spectroscopy (PES) and atomic force microscopy (AFM). In the first monolayer the molecules interact with the substrate mainly through the O atoms in the end groups of the molecule. The O atoms have a higher binding energy in the first molecular layer compared to the following layers. No chemical shifts are observed in the Si 2p spectra or in the C 1s spectra from the perylene core of the molecules. From the VB spectra and LEED pattern we conclude that the substrate remains in the c(2 × 2) reconstruction after PTCDA deposition. For thicker films a Stranski–Krastanov film growth was observed with flat lying molecules relative to the substrate.
  • Keywords
    Photoelectron spectroscopy , Chemisorption , growth , silicon carbide , atomic force microscopy
  • Journal title
    Surface Science
  • Serial Year
    2006
  • Journal title
    Surface Science
  • Record number

    1699797