Comment on “The structure of monolayer SiO2 on Mo(1 1 2): A 2-D [Si–O–Si] network or isolated [SiO4] units?”

In a recent paper by Chen and Goodman [M. Chen, D.W. Goodman, Surf. Sci. 600 (2006) L255] the structure of SiO2 films epitaxially grown on Mo(1 1 2) has been revisited. This structure has been the subject of several experimental and theoretical studies but it is still controversial, with some authors claiming that it is formed by isolated [SiO4] units and others in favor of a two-dimensional [Si–O–Si] network. With this Comment we want do underline some aspects of the discussion, in particular related to the theoretical work performed so far on this subject, which in our opinion have not been properly represented in Ref. [M. Chen, D.W. Goodman, Surf. Sci. 600 (2006) L255].