Title of article
Energy dependence of electron energy loss processes in Ge 2s photoemission
Author/Authors
Novلk، نويسنده , , M. and Egri، نويسنده , , S. and Kِvér، نويسنده , , L. and Cserny، نويسنده , , I. and Drube، نويسنده , , Raimund W. and Werner، نويسنده , , W.S.M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2007
Pages
8
From page
2344
To page
2351
Abstract
Deep core Ge 2s photoelectron spectra from polycrystalline Ge films induced by monochromatic synchrotron radiation, of 4, 6 and 8 keV were measured and analysed using two different methods, the partial intensity analysis and the extended Hüfner method to determine the spectral contributions from different electron energy loss processes due to bulk extrinsic, intrinsic and surface excitations. The obtained photon energy dependence of the ratio of these contributions was compared as a function of the photoelectron kinetic energy. It was found that the relative contribution of intrinsic excitations increase with the photon energy.
Keywords
Intrinsic loss , Extrinsic loss , X-ray photoelectron spectra , Surface excitation
Journal title
Surface Science
Serial Year
2007
Journal title
Surface Science
Record number
1700818
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