Title of article :
Energy dependence of electron energy loss processes in Ge 2s photoemission
Author/Authors :
Novلk، نويسنده , , M. and Egri، نويسنده , , S. and Kِvér، نويسنده , , L. and Cserny، نويسنده , , I. and Drube، نويسنده , , Raimund W. and Werner، نويسنده , , W.S.M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2007
Pages :
8
From page :
2344
To page :
2351
Abstract :
Deep core Ge 2s photoelectron spectra from polycrystalline Ge films induced by monochromatic synchrotron radiation, of 4, 6 and 8 keV were measured and analysed using two different methods, the partial intensity analysis and the extended Hüfner method to determine the spectral contributions from different electron energy loss processes due to bulk extrinsic, intrinsic and surface excitations. The obtained photon energy dependence of the ratio of these contributions was compared as a function of the photoelectron kinetic energy. It was found that the relative contribution of intrinsic excitations increase with the photon energy.
Keywords :
Intrinsic loss , Extrinsic loss , X-ray photoelectron spectra , Surface excitation
Journal title :
Surface Science
Serial Year :
2007
Journal title :
Surface Science
Record number :
1700818
Link To Document :
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