Title of article :
NO dissociation pathways on Rh(1 0 0), (1 1 0), and (1 1 1) surfaces: A comparative density functional theory study
Author/Authors :
Tian، نويسنده , , Kai and Tu، نويسنده , , Xue-Yan and Dai، نويسنده , , Shu-Shan، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2007
Pages :
10
From page :
3186
To page :
3195
Abstract :
The chemisorption and dissociation pathways of NO on the Rh(1 0 0), (1 1 0), and (1 1 1) surfaces are studied by the plane-wave density functional theory (DFT) with CASTEP program. In addition, the electronic and geometrical effects that affect the NO dissociation reactions have been investigated in detail. The calculation results are presented as following: The effective activation energies of the best NO dissociation pathways on the Rh(1 0 0), the Rh(1 1 0), and the Rh(1 1 1) are 0.63, 0.66 and 1.77 eV, respectively. The activity of the Rh planes for NO dissociation is in the order of Rh(1 0 0) ≈ Rh(1 1 0) > Rh(1 1 1). The low dissociation barrier for Rh(1 0 0) and Rh(1 1 0) is associated with the existence of a lying-down NO structure which acts as a precursor for dissociation. By Mulliken population analysis and structure analysis, both electronic and geometrical effects are found to affect the NO dissociation reactions, but the geometrical effect exceed the electronic. The energy decomposition scheme has been used to provide further insight into the NO dissociation reactions. Based on the calculations, the interaction energy between N and O in the transition state ( E int TS ) on the Rh(1 1 1) is found much larger than that on the Rh(1 0 0) and the Rh(1 1 0). The major differences of E int TS should originate from the variation of the bonding competition effect.
Keywords :
Density functional calculations , nitrogen oxides , Chemisorption , Low index single crystal surfaces , Surface chemical reaction , Dissociation pathway , Activation energy , Rhodium
Journal title :
Surface Science
Serial Year :
2007
Journal title :
Surface Science
Record number :
1701140
Link To Document :
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