Author/Authors :
Laukkanen، نويسنده , , P. and Ahola-Tuomi، نويسنده , , M. and Adell، نويسنده , , J. A. Adell، نويسنده , , M. and Schulte، نويسنده , , K. and Kuzmin، نويسنده , , M. and Punkkinen، نويسنده , , M.P.J. and Pakarinen، نويسنده , , J. and Tukiainen، نويسنده , , A. and Perنlن، نويسنده , , R.E. and Vنyrynen، نويسنده , , I.J. and Pessa، نويسنده , , M.، نويسنده ,
Abstract :
The bismuth-stabilized (2 × 4)-reconstructed InP(1 0 0) surface [Bi/InP(1 0 0)(2 × 4)] has been studied by synchrotron-radiation core-level photoelectron spectroscopy. The spectra are compared with previous core-level data obtained on a clean InP(1 0 0)(2 × 4) surface. The findings support that the P 2p surface-core-level shift (SCLS) of the clean InP(1 0 0)(2 × 4), which has higher kinetic energy than the bulk emission, arises from the third-layer P atoms and that the second P 2p SCLS, which has lower kinetic energy than the bulk, arises from the top-layer P atoms. Similar In 4d SCLSs are found on the clean and Bi-stabilized InP(1 0 0)(2 × 4) surfaces, indicating that these shifts contain contributions of the In atoms that lie in the second and/or fourth layers. In addition to this, the results improve our understanding of the atomic structure of the Bi/InP(1 0 0)(2 × 4) surface and lead to refined surface models which include Bi–Bi and Bi–P dimers.
Keywords :
Synchrotron radiation photoelectron spectroscopy , surface reconstruction , Indium phosphide (InP) , Single crystal surfaces
