Electron–phonon contribution to hole linewidth of the surface state on Al(0 0 1)

We report an ab initio study of the electron–phonon interaction and its contribution to the excited hole linewidth of the Γ ¯ surface state on Al(0 0 1). We have also evaluated the phonon-induced contribution to the linewidth of the occupied energy bands of Δ1 symmetry in bulk Al. The calculations were carried out using a linear response approach in the plane-wave pseudopotential representation.