Title of article :
Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy
Author/Authors :
Bussetti، نويسنده , , G. and Goletti، نويسنده , , C. and Chiaradia، نويسنده , , P. and Sassella، نويسنده , , A. and Campione، نويسنده , , M. and Tavazzi، نويسنده , , S. and Borghesi، نويسنده , , A.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2007
Pages :
4
From page :
4488
To page :
4491
Abstract :
The growth process of thin films and multilayers of quaterthiophene and sexithiophene onto molecular single crystals has been monitored in situ and in real time during deposition by organic molecular beam epitaxy, measuring the anisotropy of the optical reflectivity. The evolution of the spectra with thickness provides the signature of an epitaxial growth of the films.
Keywords :
Organic heterojunction , In situ characterization , Thin film structure , Reflectance anisotropy spectroscopy , organic thin films , Molecular Beam Epitaxy
Journal title :
Surface Science
Serial Year :
2007
Journal title :
Surface Science
Record number :
1701945
Link To Document :
بازگشت