Title of article
Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction
Author/Authors
Hashimoto، نويسنده , , M. and Fukaya، نويسنده , , Y. and Kawasuso، نويسنده , , A. and Ichimiya، نويسنده , , A.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2007
Pages
3
From page
5192
To page
5194
Abstract
We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 إ and 0.55 إ from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases.
Keywords
surface structure , Total reflection , Silicon , Indium , Reflection high-energy positron diffraction
Journal title
Surface Science
Serial Year
2007
Journal title
Surface Science
Record number
1702286
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