Title of article
N incorporation, composition and electronic structure in N-doped TiO2(0 0 1) anatase epitaxial films grown on LaAlO3(0 0 1)
Author/Authors
Cheung، نويسنده , , S.H. and Nachimuthu، نويسنده , , P. and Engelhard، نويسنده , , M.H. and Wang، نويسنده , , C.M. and Chambers، نويسنده , , S.A.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2008
Pages
9
From page
133
To page
141
Abstract
We have investigated the properties of N-doped TiO2 anatase grown by plasma-assisted molecular beam epitaxy on LaAlO3(0 0 1) substrates. Phase-pure epitaxial films in which N substitutes for O with no secondary phase formation nucleate only over a narrow range of fluxes. N substitution for O results in N 2p derived states off the top of the anatase valence band and the associated red shift in the optical bandgap.
Keywords
Molecular Beam Epitaxy , photochemistry , Semiconducting films , Titanium oxide , Single crystal epitaxy
Journal title
Surface Science
Serial Year
2008
Journal title
Surface Science
Record number
1702645
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