Title of article :
Chemisorption of tert-butanol on Si(1 0 0)
Author/Authors :
Chen، نويسنده , , T.-L. and Yilmaz، نويسنده , , M.B. and Potapenko، نويسنده , , D. and Kou، نويسنده , , A. and Stojilovic، نويسنده , , N. and Osgood Jr.، نويسنده , , R.M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2008
Pages :
6
From page :
3432
To page :
3437
Abstract :
The chemisorption of tert-butanol, an important product in atomic layer deposition (ALD) of ZrO2 from the precursor, zirconium tetra-tert-butoxide, on Si(1 0 0)−(2 × 1), has been investigated using Auger electron spectroscopy (AES) and temperature-programmed desorption (TPD). The main desorption products of the TPD experiments are isobutene and molecular hydrogen. A comparison of TPD results obtained with a clean silicon surface with that from a hydrogen-terminated Si surface indicates no chemisorption in the latter case. AES measurements reveal the presence of carbon on the sample after TPD; the amount of carbon tracks the isobutene yield in TPD experiments. A comparison is made of observations with those expected from the known reactions of simple alcohols on Si(1 0 0)−(2 × 1) and the chemisorption attributed dominantly to O–H bond scission to yield an H and tert-butoxy-group-terminated surface.
Keywords :
atomic layer deposition , High-? dielectric oxide , tert-Butanol , Si(1  , 0  , 0) , Surface chemical reaction , Temperature-programmed desorption
Journal title :
Surface Science
Serial Year :
2008
Journal title :
Surface Science
Record number :
1703948
Link To Document :
بازگشت