• Title of article

    Adsorption of N@C60 on Si(1 0 0)

  • Author/Authors

    King، نويسنده , , D.J. and Kenny، نويسنده , , S.D. and Sanville، نويسنده , , E.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2009
  • Pages
    5
  • From page
    178
  • To page
    182
  • Abstract
    The interactions between endohedrally doped N@C60 molecules and the Si(1 0 0) surface have been explored via ab initio total energy calculations. Configurations which have the cage located upon the dimer row bonded to two dimers (r2) and within the dimer trench bonded to four dimers (t4) have been investigated, as these have previously been found to be the most stable for the C60 molecule. We have investigated the differences between the adsorption of the C60 and N@C60 molecules upon the Si(1 0 0) surface and found that there are only minimal differences. Two interesting cases are the r2g and t4d configurations, as they both exhibit differences that are not present in the other configurations. These subtle differences have been explored in-depth. It is shown that the effects on the endohedral nitrogen atom, due to its placement within the fullerene cage, are small. Bader analysis has been used to explore differences between the C60 and N@C60 molecules.
  • Keywords
    Silicon , Fullerenes , Chemisorption , computer simulations , Density functional calculations
  • Journal title
    Surface Science
  • Serial Year
    2009
  • Journal title
    Surface Science
  • Record number

    1704155