Title of article
Adsorption of N@C60 on Si(1 0 0)
Author/Authors
King، نويسنده , , D.J. and Kenny، نويسنده , , S.D. and Sanville، نويسنده , , E.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2009
Pages
5
From page
178
To page
182
Abstract
The interactions between endohedrally doped N@C60 molecules and the Si(1 0 0) surface have been explored via ab initio total energy calculations. Configurations which have the cage located upon the dimer row bonded to two dimers (r2) and within the dimer trench bonded to four dimers (t4) have been investigated, as these have previously been found to be the most stable for the C60 molecule. We have investigated the differences between the adsorption of the C60 and N@C60 molecules upon the Si(1 0 0) surface and found that there are only minimal differences. Two interesting cases are the r2g and t4d configurations, as they both exhibit differences that are not present in the other configurations. These subtle differences have been explored in-depth. It is shown that the effects on the endohedral nitrogen atom, due to its placement within the fullerene cage, are small. Bader analysis has been used to explore differences between the C60 and N@C60 molecules.
Keywords
Silicon , Fullerenes , Chemisorption , computer simulations , Density functional calculations
Journal title
Surface Science
Serial Year
2009
Journal title
Surface Science
Record number
1704155
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