Author/Authors :
Irokawa، نويسنده , , Katsumi and Nagura، نويسنده , , Yuichiro and Kobayashi، نويسنده , , Hidekazu and Hara، نويسنده , , Shinsuke and Fujishiro، نويسنده , , Hiroki I. and Miki، نويسنده , , Hirofumi and Kawazu، نويسنده , , Akira and Watanabe، نويسنده , , Kazuyuki، نويسنده ,
Abstract :
The Ga-adsorbed structure on Si(1 1 3) surface at low coverage has been studied by scanning tunneling microscopy (STM). The bright protrusion corresponding to the position of the dimer without the interstitial Si atom of the clean surface disappeared in the filled-state STM image after Ga adsorption, although the protrusion due to the Si adatom still remained. On the basis of the adatom-dimer-interstitial (ADI) model, this result indicates that the Ga atom is adsorbed interstitially at the center of another pentamer that does not have the interstitial Si atom. An ab initio calculation was performed and STM images were simulated.
Keywords :
Density functional calculations , Silicon , Scanning tunneling microscopy , surface structure , Gallium
