• Title of article

    Adsorption of Si on Ag(0 0 1) from ab initio study

  • Author/Authors

    He، نويسنده , , Guo-min، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2009
  • Pages
    9
  • From page
    2021
  • To page
    2029
  • Abstract
    We have systematically investigated the adsorption of Si on the Ag(0 0 1) surface employing density-functional theory. Various adsorption geometries have been considered for Si coverages up to 2.0 monolayers. Our results show that the behaviors of Si at the early stages of growth on the Ag(0 0 1) surface are governed by a competition between the Si–Si and Si–Ag interactions. From the calculated results, we presented alternative models for the observed 3 × 3 and 4 × 7 structures. Our results provide a reasonable explanation for the experimental findings in a previous work.
  • Keywords
    Metal–semiconductor interfaces , Density functional calculations
  • Journal title
    Surface Science
  • Serial Year
    2009
  • Journal title
    Surface Science
  • Record number

    1704654