Title of article
Adsorption of Si on Ag(0 0 1) from ab initio study
Author/Authors
He، نويسنده , , Guo-min، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2009
Pages
9
From page
2021
To page
2029
Abstract
We have systematically investigated the adsorption of Si on the Ag(0 0 1) surface employing density-functional theory. Various adsorption geometries have been considered for Si coverages up to 2.0 monolayers. Our results show that the behaviors of Si at the early stages of growth on the Ag(0 0 1) surface are governed by a competition between the Si–Si and Si–Ag interactions. From the calculated results, we presented alternative models for the observed 3 × 3 and 4 × 7 structures. Our results provide a reasonable explanation for the experimental findings in a previous work.
Keywords
Metal–semiconductor interfaces , Density functional calculations
Journal title
Surface Science
Serial Year
2009
Journal title
Surface Science
Record number
1704654
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