Title of article :
Atomic and electronic structures of thin NaCl films grown on a Ge(0 0 1) surface
Author/Authors :
Tsay، نويسنده , , Shiow-Fon and Lin، نويسنده , , D.-S.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2009
Pages :
6
From page :
2102
To page :
2107
Abstract :
Density functional theory (DFT) with LDA and GGA have been employed to study the interface and thin film properties of NaCl on a Ge(0 0 1) surface. The atomic and electronic structures of thin NaCl films from one to ten monolayers were analyzed. The layer adsorption energies show that a quasi-crystalline (0 0 1) fcc NaCl film is built up via a layer-by-layer growth mode with NaCl thickness above 2 ML. Simulated STM images show a well-resolved (1 × 1) NaCl atomic structure for sample bias voltage Vs < −2.5 V and the bright protrusions should be assigned to the Cl− ions of the NaCl film. The Ge substrate dimer is reserved and buckled like a clean Ge(0 0 1)-p(2 × 2) surface as the result of weak interface interaction between the dangling bonds coming from valence π states of the Ge substrate and the 3p states of the interfacial Cl− ion. These results are consistent with the experiments of STM, LEED and EELS.
Keywords :
Alkali Halides , Germanium , surface structure , Surface electronic phenomena , Thin film structures , Density functional calculations , Semiconductor–insulator interfaces
Journal title :
Surface Science
Serial Year :
2009
Journal title :
Surface Science
Record number :
1704683
Link To Document :
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