Title of article
Phase coexistence between the (√3 × √3)R30° – β and (1 × 1) phases on Pb/Ge(1 1 1)
Author/Authors
Sato، نويسنده , , Y. and Chiang، نويسنده , , S.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2009
Pages
5
From page
2300
To page
2304
Abstract
We have characterized the phase transition between the (1 × 1) and (√3 × √3)R30° – β phases on Pb/Ge(1 1 1) using low energy electron microscopy (LEEM). We show that the transition is first-order and that, in the coexistence region of the two phases, the dominant mechanism for phase separation changes critically with Pb coverage, from nucleation and growth at 1.33 ML (saturation coverage of the β phase) to spontaneous domain switching due to thermal fluctuations of the local Pb density for slightly smaller coverage. As the Pb coverage decreases, the concentration of vacancies in the β phase increases, making additional possible Pb adsorption sites available. The larger resulting local density fluctuation of Pb becomes comparable to the density difference of the two phases, manifesting itself in the observed domain switching.
Keywords
Lead , Germanium , phase transition , phase coexistence , Metal–semiconductor interfaces , Solid–liquid interfaces , LEEM
Journal title
Surface Science
Serial Year
2009
Journal title
Surface Science
Record number
1704768
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