Ultra thin V2O3 films grown on oxidized Si(1 1 1)

The growth of V2O3(0 0 0 1) has been investigated by scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Direct evaporation of vanadium onto the Si(1 1 1)-7 × 7 substrate gives rise to massive surface intermixing and consequent silicide formation. In order to obtain the vanadium oxide with good quality, the 7 × 7 surface was initially partially oxidized which leads to a smooth oxygen–silicon surface layer which in turn prevents a complete vanadium–silicon alloy formation. Finally a vanadium oxide film of V2O3 stoichiometry was created. The grown film exposes single crystalline areas of stepped surfaces which appear azimuthally randomly-oriented.