• Title of article

    Intra-atomic charge re-organization at the Pb–Si interface: Bonding mechanism at low coverage

  • Author/Authors

    ?vec، نويسنده , , Martin and Dudr، نويسنده , , Viktor and Vondr??ek، نويسنده , , Martin and Jel?nek، نويسنده , , Pavel and Mutombo، نويسنده , , Pingo and Chab، نويسنده , , Vladim?´r and ?utara، نويسنده , , Franti?ek and Matol?n، نويسنده , , Vladimir and Prince، نويسنده , , Kevin C.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2009
  • Pages
    9
  • From page
    2861
  • To page
    2869
  • Abstract
    Lead submonolayers on the Si(1 1 1) surface in ordered structures of symmetry ( 3 × 3 ) R 30 ° were studied with photoelectron diffraction and ab initio calculations. At 1/3 monolayer coverage Pb atoms flip between up and down positions. This fluctuating geometry is connected with the charge redistribution in the basic triangular bipyramid formed by an adsorbed Pb atom and its four closest Si neighbors. The dynamic balance is reflected in the switching of bipyramids from semiconductor to metal character as a result of the interaction between an unsaturated Pb atom in the T4 position and a saturated Si atom beneath. Substitution of a Pb atom in the 1/3 monolayer coverage with a Si atom results in stabilisation of the neighboring Pb atoms in the up position which is characteristic for Pb atoms in the 1/6 monolayer mosaic phase.
  • Keywords
    Metal–semiconductor interfaces , Green’s function methods , X-Ray scattering , Lead , Silicon , Surface defects , Density functional calculations , Synchrotron radiation photoelectron spectroscopy
  • Journal title
    Surface Science
  • Serial Year
    2009
  • Journal title
    Surface Science
  • Record number

    1705008