Title of article :
Mechanism of hole doping into hydrogen terminated diamond by the adsorption of inorganic molecule
Author/Authors :
Takagi، نويسنده , , Yoshiteru and Shiraishi، نويسنده , , Kenji and Kasu، نويسنده , , Makoto and Sato، نويسنده , , Hisashi، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2013
Abstract :
We revealed a mechanism of hole doping into hydrogen (H) terminated diamond by the adsorption of inorganic molecules, based on first-principle calculation. Electron transfer from H-terminated diamond to adsorbate molecules was found in the case that the energy level of unoccupied molecular orbitals in an adsorbate molecule is below or around the valence band maximum of H-terminated diamond. The amount of doped hole carriers depends on the energy level of unoccupied molecular orbital of adsorbate molecules. The mechanism can explain the experimentally observed dependence of increasing hole sheet concentration at H-terminated diamond surface on the species of adsorbate molecule.
Keywords :
Density-functional theory , Hydrogen terminated diamond surface , Hole doping
Journal title :
Surface Science
Journal title :
Surface Science