• Title of article

    Al-induced faceting of Si(113)

  • Author/Authors

    Klein، نويسنده , , Claudius and Heidmann، نويسنده , , Inga and Nabbefeld، نويسنده , , Tobias and Speckmann، نويسنده , , Moritz and Schmidt، نويسنده , , Thomas and Meyer zu Heringdorf، نويسنده , , Frank-J. and Falta، نويسنده , , Jens and Horn-von Hoegen، نويسنده , , Michael، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2013
  • Pages
    6
  • From page
    109
  • To page
    114
  • Abstract
    Adsorption of Al on a Si(113) substrate at elevated temperatures causes a faceting transition of the initially flat surface. The (113) surface decomposes into a quasi-periodic sequence of Al terminated (115)- and (112)-facets. The resulting surface morphology is characterized in-situ by reciprocal space maps obtained with in-situ spot profile analyzing low-energy electron diffraction and ex-situ atomic force microscopy. The periodicity length of the faceted surface increases with adsorption temperature from 7 nm at 650 °C to 80 nm at 800 °C. The stability of the Al terminated Si(112) surface is the driving force for the faceting transition.
  • Keywords
    Aluminium , SPA-LEED , Facet , epitaxy , Nanowire , Silicon
  • Journal title
    Surface Science
  • Serial Year
    2013
  • Journal title
    Surface Science
  • Record number

    1706182