Title of article
Growth of epitaxial Bi-films on vicinal Si(111)
Author/Authors
Lukermann، Barbara نويسنده , , D. and Banyoudeh، نويسنده , , S. and Brand، نويسنده , , C. and Sologub، نويسنده , , S. and Pfnür، نويسنده , , H. and Tegenkamp، نويسنده , , C.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2014
Pages
6
From page
82
To page
87
Abstract
Vicinal semi-metallic Bi-films are expected to reveal topologically protected edge states. In this study the growth of Bi-multilayer structures on Si(557) substrates has been investigated by low energy electron diffraction. Thereby, wetting layer structures formed prior to the film deposition on Si(557) surfaces turned out to be crucial for epitaxial growth. Only in the presence of Bi-wetting layers can well-ordered films be grown. In contrast to growth on Si(111), the pseudo-cubic surface of Bi(110) dominates. In addition, Bi(221) surfaces have been obtained only on wetting layers formed by less than a monolayer. The formation of Si(335)-facets during formation of the wetting layers turns out to be essential for the growth of the these structures.
Keywords
Vicinal surface , Wetting layer , Electron diffraction , LEED , Bi films
Journal title
Surface Science
Serial Year
2014
Journal title
Surface Science
Record number
1706290
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