Author/Authors :
Lahti، نويسنده , , M. and Chaudhuri، نويسنده , , A. and Pussi، نويسنده , , K. and Hesp، نويسنده , , D. and McLeod، نويسنده , , I.M. and Dhanak، نويسنده , , V.R. and King، نويسنده , , M.O. and Kadodwala، نويسنده , , M. and MacLaren، نويسنده , , D.A.، نويسنده ,
Abstract :
The chemisorption of tellurium on atomically clean Cu(111) surface has been studied under ultra-high vacuum conditions. At room temperature, the initial stage of growth was an ordered 2 3 × 2 3 R30° phase (0.08 ML). An ordered 3 × 3 R30° phase is formed at 0.33 ML coverage of Te. The adsorption sites of the Te atoms on the Cu(111) surface at 0.08 ML and 0.33 ML coverages are explored by quantitative low energy electron diffraction (LEED) and density functional theory (DFT). Our results indicate that substitutional surface alloy formation starts at very low coverages.
