Laser-induced hot carrier photovoltaic effects in semiconductor junctions

In this paper we present a review of the hot carrier plasma photovoltaic effects, that occur in n+/p and p+/n semiconductor junctions through the interaction with intense infrared radiation pulses from transversely excited atmospheric (TEA) CO2 lasers. The basic conditions for the establishment of infrared laser-induced hot carrier plasma in semiconductors are considered. The junction charge transport changes induced by the hot plasma is regarded as being responsible for the different hot carrier photovoltaic effects observed. We will focus on the generation effect associated with the disturbed minority carrier drift current, and the internal photoemission effect related to the modified majority carrier diffusion junction current. These effects could be the foundation on which silicon junction far infrared laser detectors are based, having advantages over other conventional detectors, such as low cost and the possibility of easy incorporation into the well-established integrated silicon technologies. In order to optimize the response of hot carrier effect-based detectors, the main emphasis is placed on the effectʹs dependence on the characteristic junction parameters.