• Title of article

    InP-based photonic circuits: Comparison of monolithic integration techniques

  • Author/Authors

    van der Tol، نويسنده , , J.J.G.M. and Oei، نويسنده , , Y.S. and Khalique، نويسنده , , U. and Nِtzel، نويسنده , , R. and Smit، نويسنده , , M.K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    38
  • From page
    135
  • To page
    172
  • Abstract
    A review is given of techniques to integrate passive and active, optical and optoelectronic, functions within one photonic circuit. Different platforms have been developed to realize these circuits in a planar geometry on an indium phosphide substrate. The physical background of these techniques will be described and an evaluation will be given regarding their strong and weak points. An in-depth treatment will be given of two of the integration techniques, which have not yet been thoroughly described in literature: a polarization-based integration scheme (POLIS) and an active–passive regrowth technique. Finally, an outlook on the future of the different photonic integration techniques is presented.
  • Keywords
    Active-passive integration , epitaxy , monolithic integration , Indium phosphide , Photonic circuits , Integration technology
  • Journal title
    Progress in Quantum Electronics
  • Serial Year
    2010
  • Journal title
    Progress in Quantum Electronics
  • Record number

    1706775