Title of article :
Low-temperature electrodeposition of the high-temperature cubic polymorph of bismuth(III) oxide
Author/Authors :
Bohannan، نويسنده , , Eric W and Jaynes، نويسنده , , Christopher C and Shumsky، نويسنده , , Mark G and Barton، نويسنده , , Julie K and Switzer، نويسنده , , Jay A، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2000
Pages :
11
From page :
97
To page :
107
Abstract :
Nanocrystalline films of δ-Bi2O3 were electrodeposited at 65°C directly from alkaline solutions of tartrate-complexed Bi(III). This face-centered-cubic polymorph of Bi2O3 is normally only stable at high temperatures (729–825°C). The material has the highest known oxide ion mobility. We propose that the high temperature form of the oxide is stabilized due to the nanocrystalline (70 nm) size of the particles in the film. The oxide also deposits epitaxially onto a single-crystal Au(110) substrate with strong in-plane and out-of-plane orientation. The large lattice mismatch (35.4%) is accommodated by forming a coincidence lattice, in which the δ-Bi2O3 is rotated 90° relative to the Au (110) substrate. The epitaxial relationship between film and substrate may also serve to stabilize the high-temperature structure.
Keywords :
Bismuth oxide , Electrodeposition , epitaxial growth , solid electrolyte
Journal title :
Solid State Ionics
Serial Year :
2000
Journal title :
Solid State Ionics
Record number :
1706915
Link To Document :
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