Title of article
Low-temperature electrodeposition of the high-temperature cubic polymorph of bismuth(III) oxide
Author/Authors
Bohannan، نويسنده , , Eric W and Jaynes، نويسنده , , Christopher C and Shumsky، نويسنده , , Mark G and Barton، نويسنده , , Julie K and Switzer، نويسنده , , Jay A، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
11
From page
97
To page
107
Abstract
Nanocrystalline films of δ-Bi2O3 were electrodeposited at 65°C directly from alkaline solutions of tartrate-complexed Bi(III). This face-centered-cubic polymorph of Bi2O3 is normally only stable at high temperatures (729–825°C). The material has the highest known oxide ion mobility. We propose that the high temperature form of the oxide is stabilized due to the nanocrystalline (70 nm) size of the particles in the film. The oxide also deposits epitaxially onto a single-crystal Au(110) substrate with strong in-plane and out-of-plane orientation. The large lattice mismatch (35.4%) is accommodated by forming a coincidence lattice, in which the δ-Bi2O3 is rotated 90° relative to the Au (110) substrate. The epitaxial relationship between film and substrate may also serve to stabilize the high-temperature structure.
Keywords
Bismuth oxide , Electrodeposition , epitaxial growth , solid electrolyte
Journal title
Solid State Ionics
Serial Year
2000
Journal title
Solid State Ionics
Record number
1706915
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