Title of article
Structural and electrical consequences of high dopant levels in the BIMGVOX system
Author/Authors
Krok، نويسنده , , F and Abrahams، نويسنده , , I and Malys، نويسنده , , M and Bogusz، نويسنده , , W and Dygas، نويسنده , , J.R and Nelstrop، نويسنده , , J.A.G and Bush، نويسنده , , A.J، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
7
From page
119
To page
125
Abstract
The influence of high Mg2+ dopant levels in BIMGVOX, Bi2MgxV1−xO5.5−3x/2 (0.05≤x≤0.40) on structure and conductivity has been investigated using X-ray powder diffraction and a.c. impedance spectroscopy. Four, compositionally dependent, structural ranges are observed at room temperature, with emergence of a new orthorhombic phase at high dopant levels. Generally the Arrhenius plots of conductivity show two linear regions the limits of which are compositionally dependent. The results have been correlated to the stability ranges of various polymorphs within the system.
Keywords
BIMEVOX , BIMGVOX , oxide ion conductor
Journal title
Solid State Ionics
Serial Year
2000
Journal title
Solid State Ionics
Record number
1707850
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