• Title of article

    Electrochemical properties of vanadium oxide thin film deposited by R.F. sputtering

  • Author/Authors

    Park، نويسنده , , Yong Joon and Ryu، نويسنده , , Kwang Sun and Kim، نويسنده , , Kwang Man and Park، نويسنده , , Nam-Gyu and Kang، نويسنده , , Man Gu and Chang، نويسنده , , Soon Ho، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    7
  • From page
    229
  • To page
    235
  • Abstract
    Vanadium oxide (V2O5) thin films with various thicknesses have been prepared by using the radio frequency (R.F.) sputtering method from V2O5 (ceramic) or V (metal) target. The electrochemical properties of the films were characterized as a function of the thickness. The films with thickness of 500 nm fabricated from V2O5 ceramic target showed proper discharge capacity and cycle performance. However, the electrochemical property for the film with thickness of over 500 nm could not be observed due to the low deposition rate from V2O5 ceramic target and instability of interface between the surface and the film. scharge capacity and cyclic performance of vanadium oxide films deposited from V metal target degraded with increasing thickness of the films. Considering the electrochemical properties of the films and the requirement of current density for the application field of thin film battery, appropriate thickness of vanadium oxide film for thin film battery was less than 1000 nm in our work.
  • Keywords
    Vanadium oxide , Thin film , microbattery , sputtering
  • Journal title
    Solid State Ionics
  • Serial Year
    2002
  • Journal title
    Solid State Ionics
  • Record number

    1709146