Title of article
Electrochemical properties of vanadium oxide thin film deposited by R.F. sputtering
Author/Authors
Park، نويسنده , , Yong Joon and Ryu، نويسنده , , Kwang Sun and Kim، نويسنده , , Kwang Man and Park، نويسنده , , Nam-Gyu and Kang، نويسنده , , Man Gu and Chang، نويسنده , , Soon Ho، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
7
From page
229
To page
235
Abstract
Vanadium oxide (V2O5) thin films with various thicknesses have been prepared by using the radio frequency (R.F.) sputtering method from V2O5 (ceramic) or V (metal) target. The electrochemical properties of the films were characterized as a function of the thickness. The films with thickness of 500 nm fabricated from V2O5 ceramic target showed proper discharge capacity and cycle performance. However, the electrochemical property for the film with thickness of over 500 nm could not be observed due to the low deposition rate from V2O5 ceramic target and instability of interface between the surface and the film.
scharge capacity and cyclic performance of vanadium oxide films deposited from V metal target degraded with increasing thickness of the films. Considering the electrochemical properties of the films and the requirement of current density for the application field of thin film battery, appropriate thickness of vanadium oxide film for thin film battery was less than 1000 nm in our work.
Keywords
Vanadium oxide , Thin film , microbattery , sputtering
Journal title
Solid State Ionics
Serial Year
2002
Journal title
Solid State Ionics
Record number
1709146
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