Author/Authors :
Kim، نويسنده , , Bong-Jin and Kim، نويسنده , , Hyung-Jun and Yoon، نويسنده , , Tae-Sik and Kim، نويسنده , , Yong-Sang and Lee، نويسنده , , Doo-Hyoung and Choi، نويسنده , , Youngmin and Ryu، نويسنده , , Byung-Hwan and Lee، نويسنده , , Hyun Ho، نويسنده ,
Abstract :
Solution process-based inorganic indium–zinc–tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600 °C on plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) dielectric layer. The spin-coated indium–zinc–tin oxide (IZTO) transistor has a field-effect mobility of 4.36 cm2/V s with on/off ratio of 105 having the subthreshold voltage shift of 0.537 V/dec. The device characterization and surface analysis after annealing were performed and compared with results before annealing. Our results offer the feasibility of solution-based oxide semiconductor transistors for cost-effective display or other electronic devices.
