Title of article
Intrinsic polyatomic defects in Sc2(WO4)3
Author/Authors
Zhou، نويسنده , , Yongkai and Rao، نويسنده , , R. Prasada and Adams، نويسنده , , Stefan، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2011
Pages
4
From page
34
To page
37
Abstract
The intrinsic formation of polyatomic defects in Sc2(WO4)3-type structures is studied by Mott Littleton calculations and Molecular Dynamics simulations. Defects involving the WO42− tetrahedron are found to be energetically favorable when compared to isolated W and O defects. WO42− Frenkel and (2Sc3+, 3WO42−) Schottky defects exhibit formation energies of 1.23 eV and 1.97 eV, respectively and therefore may occur as intrinsic defects in Sc2(WO4)3 at elevated temperatures. WO42− vacancy and interstitial migration processes have been simulated by classical Molecular Dynamics simulations. The interstitial defect exhibits a nearly 10 times higher mobility (with a migration energy of 0.68 eV), than the vacancy mechanism (with a slightly higher migration energy of 0.74 eV) and thus should dominate the overall ionic conduction. Still both models reproduce the experimental activation energy (0.67 eV) nearly within experimental uncertainty.
Keywords
Ion conducting solids , Scandium tungstate , Polyatomic defect , Tungstate migration , computer simulations , lattice dynamics
Journal title
Solid State Ionics
Serial Year
2011
Journal title
Solid State Ionics
Record number
1710411
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