Author/Authors :
Frison، نويسنده , , R. and Heiroth، نويسنده , , S. and Rupp، نويسنده , , J.L.M. and Conder، نويسنده , , K. and Barthazy، نويسنده , , E.J. and Müller، نويسنده , , E. and Horisberger، نويسنده , , M. and Dِbeli، نويسنده , , M. and Gauckler، نويسنده , , L.J.، نويسنده ,
Abstract :
The crystallization upon thermal treatment of 8 mol% yttria-stabilized zirconia thin films deposited by RF-sputtering at room temperature is investigated. The as-deposited YSZ films are biphasic with crystallites of 5–10 nm in diameter building a columnar-like microstructure. Fully crystalline YSZ thin films are obtained after isothermal dwells in the temperature range 800–1100 °C. X-ray diffraction and Raman spectroscopy demonstrate that the crystalline films have a cubic structure retained even after high-temperature annealing while a strong texture is developed. Further, a stagnating grain-growth is observed, characterized by a final grain size of about 60 nm and a micro-strain of 0.15%. Given the observed filmsʹ micro-structural stability, their application in miniaturized electrochemical devices such as micro-solid oxide fuel cells or sensors can be foreseen.
Keywords :
crystallization , grain growth , Thin films , ceramics , Yttria stabilized-zirconia , Rf-sputtering