Title of article
Electronic surface properties of rf-magnetron sputtered In2O3:Sn
Author/Authors
B. and Gassenbauer، نويسنده , , Yvonne and Klein، نويسنده , , Andreas، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
5
From page
141
To page
145
Abstract
Thin films of tin doped indium oxide (In2O3:Sn or ITO) were deposited by rf-magnetron sputtering from ceramic In2O3/SnO2 targets. Surface electronic properties were investigated using in situ photoelectron spectroscopy (XPS, UPS). Bulk properties were analysed using electrical and optical measurements. While for a range of deposition parameters the ITO films clearly show degenerate bulk doping, the surfaces exhibit a Fermi level position well below the conduction band minimum.
Keywords
indium tin oxide , surface , Photoemission , Stoichiometry
Journal title
Solid State Ionics
Serial Year
2004
Journal title
Solid State Ionics
Record number
1716836
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