Title of article
Single crystal growth and oxide ion conductivity of apatite-type rare-earth silicates
Author/Authors
Higuchi، نويسنده , , M. and Masubuchi، نويسنده , , Y. and Nakayama، نويسنده , , S. and Kikkawa، نويسنده , , S. and Kodaira، نويسنده , , K.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
8
From page
73
To page
80
Abstract
Rare-earth silicate with an apatite structure is a new type of oxide ion conductor, the electrical conductivity of which is higher at relatively low temperatures than that of stabilized zirconia. Single crystals are indispensable in order to reveal the intrinsic bulk properties such as anisotropy of electrical conductivity. This paper reviews our recent research work on single crystals growth by the floating zone method and electrical properties of this material, including reinvestigation of phase relations in Nd2O3–SiO2 system and structure refinement using neutron diffraction. A possible mechanism for the oxide ion conduction is proposed based on the existence of cation vacancies.
Keywords
oxide ion conductivity , Floating zone method , Rare-earth Silicate , structure refinement , Cation vacancy
Journal title
Solid State Ionics
Serial Year
2004
Journal title
Solid State Ionics
Record number
1716864
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