Title of article :
Electrical conduction behaviour of perovskite oxide system BaSn1−xNbxO3
Author/Authors :
Singh، نويسنده , , Prabhakar and Parkash، نويسنده , , O.M. and Kumar، نويسنده , , Devendra، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Pages :
4
From page :
2167
To page :
2170
Abstract :
Electrical behaviour of compositions with x ≤ 0.100 in the BaSn1−xNbxO3 system has been studied by employing complex impedance method in the temperature range 300–500 K and in the frequency range 100 Hz–10 MHz. An equivalent electrical circuit model, which contains a series arrangement of two parallel RC elements, is proposed to represent the electrical characteristics of the material. These studies show the contributions of two processes to the electrical conductivity, which are attributed to the activated hopping processes within the bulk. Electrical conduction behaviour has been explained in terms of the defect structure model.
Keywords :
Perovskite oxide , Barium stannate , Heterovalent substitution , Impedance spectroscopy , defect structure
Journal title :
Solid State Ionics
Serial Year :
2005
Journal title :
Solid State Ionics
Record number :
1718096
Link To Document :
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