Title of article :
Electronic structure of proton conducting BaCe0.90Y0.10O3−δ
Author/Authors :
Higuchi، نويسنده , , T. K. Tsukamoto ، نويسنده , , T. Aoki-Matsumoto، نويسنده , , H. and Shimura، نويسنده , , T. and Yashiro، نويسنده , , K. and KAWADA، نويسنده , , T. and Mizusaki، نويسنده , , J. and Shin، نويسنده , , S. and Hattori، نويسنده , , T.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Pages :
4
From page :
2967
To page :
2970
Abstract :
The electronic structure of the protonic conductor Y-doped BaCeO3 (BaCe0.90Y0.10O3−δ) has been studied by soft-X-ray spectroscopy. The valence band of H2-annealed BaCe0.90Y0.10O3−δ, which consists of the O 2p states hybridized with Ce 4f states, shifts to the higher binding energy side by approximately 0.4 eV. In the air-annealed BaCe0.90Y0.10O3−δ, holes and acceptor levels are observed at the top of the valence band and just above EF, respectively. Their intensities are lower in H2-annealed BaCe0.90Y0.10O3−δ. These findings indicate directly that hydrogen doping compensates for the presence of the holes.
Keywords :
Electronic structure , X-ray absorption spectroscopy (XAS) , Photoemission spectroscopy (PES) , BaCe1?xYxO3?? , Protonic conductor , Holes
Journal title :
Solid State Ionics
Serial Year :
2005
Journal title :
Solid State Ionics
Record number :
1718437
Link To Document :
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