Title of article
Growth and high-temperature properties of gallium orthophosphate
Author/Authors
Hofmann، نويسنده , , P. and Jacobs، نويسنده , , K. and Federmann، نويسنده , , H. and Schulz، نويسنده , , M. and Fritze، نويسنده , , H. L. Tuller، نويسنده , , H.L.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2006
Pages
4
From page
3175
To page
3178
Abstract
GaPO4 crystals were grown from solutions of aqueous phosphoric acid. A critical factor influencing the high-temperature behaviour of the material is its content of −OH groups, which was determined by FT-IR spectroscopy. From an Arrhenius plot of the electrical conductivity of platinum electroded crystals, a single activation energy of 1.68 ± 0.07 eV to temperatures of about 950 °C was derived irrespective of the source of the crystals. A conduction model based on proton migration via a hydrogen bridge bond between an OH group and an adjacent oxygen ion is proposed.
Journal title
Solid State Ionics
Serial Year
2006
Journal title
Solid State Ionics
Record number
1719673
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